Improvement of radiation resistance of GaInP/GaInAs/Ge triple-junction solar cell with GaInAs/GaAsP quantum wells
Improvement of radiation resistance of GaInP/GaInAs/Ge triple-junction solar cell with GaInAs/GaAsP quantum wells
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DOI：
10.35848/1347-4065/ad0cda
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发表时间：
2023
期刊：
影响因子：
--
通讯作者：
Gang Wang
中科院分区：
文献类型：
--
作者：
Wenyi Yang;Xiaobin Zhang;Zimin Chen;Lin Zhu;Xuezhen Liu;Jianqing Liu;Gang Wang
Abstract. Introducing quantum wells (QWs) into GaAs solar cell can expand its spectral response range to raise the short-circuit current (Jsc). The GaInP/GaInAs/Ge triple-junction (TJ) solar cells with strain-balanced InGaAs/GaAsP QWs in GaInAs cell have been fabricated and irradiated by 1 MeV electron fluences. The AM0 efficiency of TJ cell increases from 30% to 32% by inserting 30 period QWs. Under electron irradiation condition of 1 MeV, 1×1015 cm-2, the radiation resistances of quantum well solar cells (QWSCs) are worse than that of reference cell without QWs. Moreover, the effect of QW doping on the radiation resistance of 30 QW solar cell has been studied. After irradiation, the radiation resistance of Jsc is improved by unintentional doping of QWs, resulting in lower degradation of efficiency. An efficiency of 26.30% after irradiation is obtained and it indicates that the QWSC has expectable potential to be applied to satellite.
