Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs
Ge outdiffusion effect on flicker noise in strained-Si nMOSFETs
复制标题
Ge 外扩散对应变 Si nMOSFET 闪烁噪声的影响
DOI：
10.1109/led.2004.834884
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发表时间：
2004
影响因子：
4.9
通讯作者：
K.M. Chen
中科院分区：
文献类型：
--
作者：
Wei;M. Lee;P. Chen;S. Maikap;C. Liu;K.M. Chen
应变硅nMOSFET的闪烁噪声特性与栅氧化层的形成密切相关。在高温（900/spl deg/C）热氧化时，Si/氧化物界面处的Si杂质注入到下面的Si-SiGe异质结中，增强了Ge向Si/氧化物界面的外扩散。在Si/氧化物界面处的Ge原子作为陷阱中心，并且具有热栅氧化物的应变Si nMOSFET产生比控制Si器件大得多的闪烁噪声。Ge的外扩散被抑制与低温（700/spl度/C）的原硅酸四乙酯栅极氧化物的设备。热氧化物应变硅器件的电容-电压测量结果也表明，由于Ge的外扩散，Si/氧化物界面陷阱密度增加，Si-SiGe异质结变模糊。
The flicker noise characteristics of strained-Si nMOSFETs are significantly dependent on the gate oxide formation. At high temperature (900/spl deg/C) thermal oxidation, the Si interstitials at the Si/oxide interface were injected into the underneath Si-SiGe heterojunction, and enhanced the Ge outdiffusion into the Si/oxide interface. The Ge atoms at Si/oxide interface act as trap centers, and the strained-Si nMOSFET with thermal gate oxide yields a much larger flicker noise than the control Si device. The Ge outdiffusion is suppressed for the device with the low temperature (700/spl deg/C) tetraethylorthosilicate gate oxide. The capacitance-voltage measurements of the strained-Si devices with thermal oxide also show that the Si/oxide interface trap density increases and the Si-SiGe heterojunction is smeared out due to the Ge outdiffusion.