Current Mirrors on Complementary Field-Effect Transistors with a Control PN Junction for Low-Temperature and Radiation-Hardened Analog ICs
Current Mirrors on Complementary Field-Effect Transistors with a Control PN Junction for Low-Temperature and Radiation-Hardened Analog ICs
复制标题
用于低温和抗辐射模拟 IC 的具有控制 PN 结的互补场效应晶体管上的电流镜
DOI：
--
复制
发表时间：
2021
期刊：
影响因子：
--
通讯作者：
N. Butyrlagin
中科院分区：
文献类型：
--
作者：
N. Prokopenko;A. Bugakova;D. Denisenko;V. Chumakov;N. Butyrlagin
电流镜是许多模拟集成电路的基础。在这种情况下，运算放大器、比较器等的零偏置电压的系统分量和输入共模抑制比在很大程度上取决于它们所使用的cm的电流增益（Ki），即Ki与unity的差值。本文介绍了用于JFET/ CJFET运算放大器的精密低温CMs的电路基础，提供了获得反相和非反相Ki值（+1,+2,+3,-1,-2）的能力。具有$mathrm{K}_{mathrm{i}}=1div 3$的非反转CMs在salen - key类的活动RC过滤器中是需要的。由于使用了JFET晶体管，所提出的CMs工作在低温范围（高达-197°C），以及中子通量高达1014n/cm2。在LTSpice XVII环境中，在具有JSC“Integral”（明斯克，白俄罗斯共和国）控制pn结的互补场效应晶体管上对所开发的CMs进行了计算机模拟，并证实了所考虑的CMs在大输入电流范围内的高精度。
Current mirror (CMs) are the basis of many analog integrated circuits. In this case, the systematic component of the zero bias voltage and the input common-mode rejection ratio of operational amplifiers, comparators, etc. largely depends on the current gain (Ki) of the CMs used in them, that is, the differences between Ki and unity. The article presents the circuitry fundamentals of precision low-temperature CMs for JFET/ CJFET operational amplifiers, providing the ability to obtain both inverting and non-inverting Ki values (+1, +2, +3, -1, -2). Non-inverting CMs with $mathrm{K}_{mathrm{i}}=1div 3$ are in demand in active RC filters of the Sallen-Key class. Due to the use of JFET transistors, the proposed CMs operate in the low temperature range (up to -197°C), as well as with a neutron flux up to 1014n/cm2. Computer simulation of the developed CMs, performed in the LTSpice XVII environment on complementary field-effect transistors with a control pn junction of JSC “Integral” (Minsk, Republic of Belarus) and confirms the high precision of the considered CMs in a wide range of input currents.