CoSm‐based high‐coercivity thin films for longitudinal recording
CoSm‐based high‐coercivity thin films for longitudinal recording
复制标题
用于纵向记录的CoSm基高矫顽力薄膜
DOI：
10.1063/1.348118
复制
发表时间：
1991
影响因子：
3.2
通讯作者：
D. Lambeth
中科院分区：
文献类型：
--
作者：
E. Velu;D. Lambeth
为了制备具有高本征矫顽力的薄膜，我们研究了用射频二极管溅射法制备的CoSm薄膜。我们确定了一套优化的溅射参数，用于在有或没有Cr衬底的玻璃和NiP‐涂层Al衬底上溅射薄膜。薄膜的矫顽力与氩气压力密切相关，而Cr下层的< 110 >织构不受氩气压力的影响。温度≥300℃时，Cr < 110 >织构变为< 200 >织构，膜的矫顽力明显降低。在最佳条件下，我们得到了厚度<20 nm薄膜的本征矫顽力> 2400 Oe。
In order to produce thin media with high intrinsic coercivity, we studied a number of CoSm films produced by rf‐diode sputtering. We determined an optimized set of sputtering parameters for films sputtered both on glass and NiP‐coated Al substrates with and without Cr underlayers. While the coercivity of the films depended strongly on argon pressure, the 〈110〉 texture of the Cr underlayer remained unaffected by it. The 〈110〉 texture of Cr changed to 〈200〉 texture at temperatures ≥300 °C, and the coercivity of the film was significantly reduced. Under optimal conditions we obtained intrinsic coercivities ≳2400 Oe for films with thickness <20 nm.