Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy
Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy
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DOI：
10.1063/1.1739511
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发表时间：
2004-05-03
影响因子：
4
通讯作者：
Daudin, B
中科院分区：
文献类型：
--
作者：
Monroy, E;Sarigiannidou, E;Daudin, B
我们研究了氮化镓在分子束外延生长过程中的表面动力学，研究了氮化镓的润湿性和表面形貌。在n面GaN的情况下，不可能建立作为分子束外延生长的表面活性剂的自我调节的Ga双分子层。事实上，为了防止Ga液滴的积累，生长n面GaN必须在生长表面上少于一层过量的Ga。当生长在Ga积累极限时，达到最佳表面形貌。(C) 2004年美国物理研究所。
We have studied the surface kinetics of N-face GaN during molecular-beam epitaxial growth by investigating the Ga wetting and the surface morphology. In the case of N-face GaN, it is not possible to establish the self-regulated Ga bilayer that is used as a surfactant for molecular-beam-epitaxy growth of Ga-face GaN. Indeed, to prevent the accumulation of Ga droplets, growth of the N-face GaN must be performed with less than one monolayer of excess Ga on the growing surface. Optimum surface morphology is achieved when growth is performed at the Ga accumulation limit. (C) 2004 American Institute of Physics.