Inversion domain boundaries and phase separation in p-AlGaN layers with high Al contents
Inversion domain boundaries and phase separation in p-AlGaN layers with high Al contents
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DOI：
10.1063/1.2210450
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发表时间：
2006-06
影响因子：
4
通讯作者：
H. Cho;B. Kong;Z. Ren;J. Han;S. Jeon
中科院分区：
文献类型：
--
作者：
H. Cho;B. Kong;Z. Ren;J. Han;S. Jeon
利用透射电子显微镜研究了Mg掺杂和Al组分对生长在未掺杂Al0.3Ga0.7N上的Mg掺杂p-AlxGa 1 −xN外延层中反型畴界（IDBs）和自组装超晶格形成的影响。的形成，起始位置和形状的小面IDBs强烈依赖于Mg和Al的含量。水平排列良好的自组装超晶格与大的组成调制相分离，也观察到在Mg掺杂的p-AlGaN的形成之前的多面IDB。利用透射电子显微镜研究了Mg掺杂和Al组分对生长在未掺杂Al 0. 3Ga 0. 7 N上的Mg掺杂p-AlxGa 1 −xN外延层中反型畴界和自组装超晶格形成的影响.的形成，起始位置和形状的小面IDBs强烈依赖于Mg和Al的含量。水平排列良好的自组装超晶格与大的组成调制相分离，也观察到在Mg掺杂的p-AlGaN的形成之前的多面IDB。从扩散条纹获得的调制的周期是1040 A。
The effect of Mg incorporation and Al composition on the formation of inversion domain boundaries (IDBs) and self-assembled superlattices in Mg-doped p-AlxGa1−xN epilayers grown on undoped Al0.3Ga0.7N was investigated by transmission electron microscopy. The formation, initiating position, and shape of the faceted IDBs strongly depended on the Mg and Al contents. Horizontally well-aligned self-assembled superlattices with large composition modulation by phase separation were also observed in the Mg-doped p-AlGaN before the formation of the faceted IDBs. The periodicity of the modulation obtained from the diffused streaks is ∼40A.The effect of Mg incorporation and Al composition on the formation of inversion domain boundaries (IDBs) and self-assembled superlattices in Mg-doped p-AlxGa1−xN epilayers grown on undoped Al0.3Ga0.7N was investigated by transmission electron microscopy. The formation, initiating position, and shape of the faceted IDBs strongly depended on the Mg and Al contents. Horizontally well-aligned self-assembled superlattices with large composition modulation by phase separation were also observed in the Mg-doped p-AlGaN before the formation of the faceted IDBs. The periodicity of the modulation obtained from the diffused streaks is ∼40A.