Sub-10-nm-Scale Lithography Using p-chloromethyl-methoxy-calix[4]arene Resist
Sub-10-nm-Scale Lithography Using p-chloromethyl-methoxy-calix[4]arene Resist
复制标题
使用对氯甲基甲氧基杯[4]芳烃抗蚀剂进行亚 10 纳米级光刻
DOI：
10.1143/jjap.42.3913
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发表时间：
2003
影响因子：
1.5
通讯作者：
J. Momoda
中科院分区：
文献类型：
--
作者：
M. Ishida;J. Fujita;T. Ogura;Y. Ochiai;E. Ohshima;J. Momoda
我们研究了对氯甲基甲氧基杯[4]芳烃 (CMC4) 作为电子束 (EB) 光刻高分辨率负性光刻胶的特性。 CMC4的最高分辨率小于8 nm，并且在迄今为止研究的杯芳烃抗蚀剂中，它在无Cl溶剂中具有最高的溶解度。与对氯甲基甲氧基杯[6]芳烃(CMC6)抗蚀剂的比较表明，CMC4抗蚀剂的低分子量和低结晶度是其高分辨率和高溶解度的根源。
We examined the properties of p-chloromethyl-methoxy-calix[4]arene (CMC4) as a high-resolution negative-tone resist for electron-beam (EB) lithography. CMC4's highest resolution was less than 8 nm, and of the calixarene resists studied so far, it has the highest solubility in Cl-free solvents. Comparison with the p-chloromethyl-methoxy-calix[6]arene (CMC6) resist revealed that the CMC4 resist's low molecular weight and low crystallinity were the origin of its high resolution and high solubility.