Resistivity size effect in epitaxial Ru(0001) layers
Resistivity size effect in epitaxial Ru(0001) layers
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DOI：
10.1063/1.5046430
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发表时间：
2018-10-28
影响因子：
3.2
通讯作者：
Gall, Daniel
中科院分区：
文献类型：
--
作者：
Milosevic, Erik;Kerdsongpanya, Sit;Gall, Daniel
外延Ru(0001)层通过溅射沉积在Al₂O₃(0001)衬底上，并且其电阻率ρ在原位和非原位下作为厚度d = 5 - 80 nm的函数进行测量，以便量化与电子 - 表面散射相关的电阻率标度。所有层都具有光滑表面，其均方根粗糙度……
Epitaxial Ru(0001) layers are sputter deposited onto Al2O3(0001) substrates and their resistivity rho measured both in situ and ex situ as a function of thickness d = 5-80 nm in order to quantify the resistivity scaling associated with electron-surface scattering. All layers have smooth surfaces with a root-mean-square roughness