ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS
ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS
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DOI：
10.1103/physrevb.35.6182
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发表时间：
1987-04-15
影响因子：
3.7
通讯作者：
CHRISTENSEN, NE
中科院分区：
文献类型：
--
作者：
CARDONA, M;CHRISTENSEN, NE
本文认为，最近用线性松饼-锡-轨道方法计算的四面体半导体的绝对静水压形变势，在用于计算电子-声子相互作用之前，必须用材料的介电响应来筛选。这种屏蔽可以通过使用在能带结构的特殊(Baldereschi)点评估的平均介电间隙的中点来估计。介电带隙中能(DME)与Tejedor和Flores以及Tersoff引入的电荷中性点有关，用来评估异质结和肖特基势垒高度中的能带偏移。我们用这种方法计算了几个异质结的能带偏移量，并将它们与其他实验和理论结果进行了比较。表中列出了DME，并与特尔索夫的电荷中性点进行了比较。
It is argued that the absolute hydrostatic deformation potentials recently calculated for tetrahedral semiconductors with the linear muffin-tin-orbital method must be screened by the dielectric response of the material before using them to calculate electron-phonon interaction. This screening can be estimated by using the midpoint of an average dielectric gap evaluated at special (Baldereschi) points of the band structure. This dielectric midgap energy (DME) is related to the charge-neutrality point introduced by Tejedor and Flores, and also by Tersoff, to evaluate band offsets in heterojunctions and Schottky-barrier heights. We tabulate band offsets obtained with this method for several heterojunctions and compare them with other experimental and theoretical results. The DME’s are tabulated and compared with those of Tersoff’s charge-neutrality points.