Novel GaAs surface phases via direct control of chemical potential
Novel GaAs surface phases via direct control of chemical potential
复制标题
通过直接控制化学势的新型 GaAs 表面相
DOI：
10.1103/physrevb.93.195314
复制
发表时间：
2016
影响因子：
3.7
通讯作者：
D. Jesson
中科院分区：
文献类型：
--
作者：
C. Zheng;J. Tersoff;W. Tang;A. Morreau;D. Jesson
使用原位表面电子显微镜，我们表明，GaAs（001）的表面化学势，因此表面相，可以系统地控制通过改变温度与液体Ga液滴作为Ga水库。随着温度的降低，表面接近与液体Ga的平衡。这提供了一个以前未达到的制度，在那里我们发现超富Ga相，扩展了在这个技术上重要的系统中可用的表面相的范围。类似的二元或多组分半导体，如InGaAs，预计也会出现同样的行为。
Using in situ surface electron microscopy, we show that the surface chemical potential of GaAs (001), and hence the surface phase, can be systematically controlled by varying temperature with liquid Ga droplets present as Ga reservoirs. With decreasing temperature, the surface approaches equilibrium with liquid Ga. This provides access to a previously unattained regime, where we find phases ultra-rich in Ga, extending the range of surface phases available in this technologically important system. The same behaviour is expected to occur for similar binary or multi-component semiconductors such as InGaAs.