Robustness of helical edge states in topological insulators
Robustness of helical edge states in topological insulators
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拓扑绝缘体中螺旋边缘态的鲁棒性
DOI：
10.1103/physrevb.85.241402
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发表时间：
2012-06
影响因子：
3.7
通讯作者：
Hong Guo
中科院分区：
文献类型：
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作者：
Xue-Feng Wang;Yibin Hu;Hong Guo
拓扑绝缘体（TIs）是一种在体内具有能带隙并在表面传导螺旋电子态的材料。螺旋态受到时间反转对称性的保护，因此有望对静态无序散射具有鲁棒性。本文报道了由三维TI材料Bi${}_{2}$Se${}_{3}$构成的双探针输运结中无序散射的原子第一性原理分析。定量地确定了器件对无序散射的鲁棒性。研究了许多不同的散射构型，得出了一个总的趋势，即摄动势有多强，以及它如何在空间上分布，从而使Bi${}_{2}$Se${}_{3}$表面上的螺旋态脱轨。
Topological insulators (TIs) are materials having an energy band gap in the bulk and conducting helical electronic states on the surface. The helical states are protected by time-reversal symmetry and thus are expected to be robust against static disorder scattering. In this work we report an atomistic first principles analysis of disorder scattering in two-probe transport junctions made of three-dimensional TI material Bi${}_{2}$Se${}_{3}$. The robustness of the device against disorder scattering is determined quantitatively. Examining many different scattering configurations, a general trend emerges on how strong is the perturbing potential and how it is spatially distributed so that it can derail the helical states on the Bi${}_{2}$Se${}_{3}$ surfaces.
DOI：
10.1007/bf02322947
发表时间：
2006
期刊：
Archiv für Psychiatrie und Nervenkrankheiten
影响因子：
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