Electronic state of a new organic conductor (TTM-TTP)I3 with a one-dimensional half-filled band
Electronic state of a new organic conductor (TTM-TTP)I3 with a one-dimensional half-filled band
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具有一维半填充能带的新型有机导体（TTM-TTP）I3的电子态
DOI：
10.1016/s0022-3697(00)00176-1
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发表时间：
2001
影响因子：
4
通讯作者：
Y. Misaki
中科院分区：
文献类型：
--
作者：
M. Onuki;K. Hiraki;Toshihiro Takahashi;D. Jinno;T. Kawamoto;Takashi Mori;Tanaka Keiji;Y. Misaki
用~（13）C NMR研究了一维半满带体系（TTM-TTP）I_3的电子态性质。通过核磁共振弛豫速率1/T1的温度依赖性，观察到在120 K左右的金属-绝缘体转变。从绝缘态的NMR谱分析，强烈地表明TTM-TTP分子2-0-2-0价态的电荷交换存在沿着堆积轴。
13C NMR measurements have been carried out to investigate the nature of the electronic state of the one-dimensional half-filled band system, (TTM-TTP)I3. Metal–insulator transition at around 120K was observed through the temperature dependence of NMR relaxation rate, 1/T1. From the analysis of NMR spectra in the insulating state, it is strongly suggested that charge disproportionation with the valences of the TTM-TTP molecules 2-0-2-0 exists along the stacking axis.