Transition of carbon binding states on Si(100) depending on substrate temperature and its effect on Ge growth
Transition of carbon binding states on Si(100) depending on substrate temperature and its effect on Ge growth
复制标题
Si(100) 上碳结合态的转变取决于衬底温度及其对 Ge 生长的影响
DOI：
10.1016/j.mee.2013.12.023
复制
发表时间：
2014
影响因子：
2.3
通讯作者：
Katsuyoshi Washio
中科院分区：
文献类型：
--
作者：
Yuhki Itoh;Shinji Hatakeyama;Tomoyuki Kawashima;Katsuyoshi Washio
