Temperature behavior of inhomogeneous Pt/GaN Schottky contacts
Temperature behavior of inhomogeneous Pt/GaN Schottky contacts
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DOI：
10.1063/1.2710770
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发表时间：
2007-03
影响因子：
4
通讯作者：
F. Iucolano;F. Roccaforte;F. Giannazzo;V. Raineri
中科院分区：
文献类型：
--
作者：
F. Iucolano;F. Roccaforte;F. Giannazzo;V. Raineri
在这封信中，纳米尺度局部的Pt scinGaN肖特基势垒的电性能和宏观肖特基二极管的温度行为之间的相关性被证明。虽然在400°C退火后实现了二极管的理想因子的显着改善，但用导电原子力显微镜的偏置尖端进行的局部电流-电压测量揭示了势垒的不均匀性。它的纳米级均匀度通过Tung的模型[Phys. Rev. B 45，13509（1992）]定量描述，允许作者解释宏观二极管的电特性的温度依赖性。
In this letter, a correlation between the nanoscale localized electrical properties of the Pt∕GaN Schottky barrier and the temperature behavior of macroscopic Schottky diodes is demonstrated. Although a significant improvement of the ideality factor of the diodes is achieved after annealing at 400°C, local current-voltage measurements, performed with a biased tip of a conductive atomic force microscope, revealed the inhomogeneous nature of the barrier. Its nanoscale degree of homogeneity was quantitatively described by means of Tung’s model [Phys. Rev. B 45, 13509 (1992)], allowing the authors to explain the temperature dependence of the electrical characteristics of the macroscopic diodes.