High-Current Tunneling FETs With (110) Orientation and a Channel Heterojunction
High-Current Tunneling FETs With (110) Orientation and a Channel Heterojunction
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具有 (110) 方向和沟道异质结的高电流隧道 FET
DOI：
10.1109/led.2016.2523269
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发表时间：
2016
影响因子：
4.9
通讯作者：
Rodwell, Mark J.
中科院分区：
文献类型：
--
作者：
Long, Pengyu;Huang, Jun Z.;Povolotskyi, Michael;Klimeck, Gerhard;Rodwell, Mark J.
我们提出了InAs/GaSb超薄体隧道场效应晶体管（tfet），利用（11 ~ 0）平面的约束和[110]方向的输运，通过降低隧道势垒能和空穴有效质量来增加隧道概率。为了减小开关态泄漏电流，我们在通道中加入了InAs/ in1 - nalnas1 - nsbn异质结，增加了价带势垒。异质结还通过减小pn结的隧穿距离和引入谐振态来增加隧穿概率和导通电流。利用NEMO5的全原子非平衡格林函数量子输运方法来探索设计空间。当选择10-3A/m off电流（IOFF）和0.3 V电源时，我们模拟了30nm栅极长度270 a /m的on电流（ION）和15nm栅极长度（Lg） 170 a /m的on电流（ION），而传统的15nm Lg GaSb/InAs TFET在（001）约束下仅显示24 a /m的ION。
We propose InAs/GaSb ultrathin-body tunneling field-effect transistors (TFETs) using confinement in the (11̅0) plane and transport in the [110] direction to increase the tunneling probability by reducing the tunnel barrier energy and hole effective mass. To reduce the OFF-state leakage current, we add an InAs/In1-nAlnAs1-nSbnheterojunction to the channel, which increases the valence band barrier. The heterojunction also increases the tunneling probability and ON-current by reducing the tunneling distance through the p-n junction and introducing a resonant state. A fully atomistic non-equilibrium Green function quantum transport approach in NEMO5 is used to explore the design space. While choosing 10-3A/m OFF-current (IOFF) and a 0.3 V power supply, we simulate 270 A/m ON-current (ION) for a 30-nm gate length and 170 A/m for a 15-nm gate length (Lg), while a conventional 15-nm Lg GaSb/InAs TFET under (001) confinement shows only 24 A/m ION.