Strain-Induced Spatial and Spectral Isolation of Quantum Emitters in Mono- and Bilayer WSe2.
Strain-Induced Spatial and Spectral Isolation of Quantum Emitters in Mono- and Bilayer WSe2.
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DOI：
10.1021/acs.nanolett.5b03312
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发表时间：
2015-11-11
期刊：
影响因子：
10.8
通讯作者：
Gerardot BD
中科院分区：
文献类型：
--
作者：
Kumar S;Kaczmarczyk A;Gerardot BD
二维过渡金属二硫属化物半导体材料由于其独特的光电性质而成为量子光源的重要研究对象。在这里，我们报告的应变梯度，无论是无意中诱导或基板图案化产生的，导致在空间和光谱隔离的量子发射器在单层和双层WSe 2。通过关联局域激子与局域应变的变化，我们表明，量子发射体的发射能量可以红调谐到一个显着的170毫电子伏。我们探测了应变发射极的精细结构、磁光和二阶相干性。这些结果提高了应变工程量子发射体特性和确定性地在二维半导体中创建量子发射体阵列的前景。
Two-dimensional transition metal dichalcogenide semiconductors are intriguing hosts for quantum light sources due to their unique optoelectronic properties. Here, we report that strain gradients, either unintentionally induced or generated by substrate patterning, result in spatially and spectrally isolated quantum emitters in mono- and bilayer WSe2. By correlating localized excitons with localized strain variations, we show that the quantum emitter emission energy can be red-tuned up to a remarkable ∼170 meV. We probe the fine-structure, magneto-optics, and second-order coherence of a strained emitter. These results raise the prospect of strain-engineering quantum emitter properties and deterministically creating arrays of quantum emitters in two-dimensional semiconductors.