BaM/Pt multilayered films with fine grains and large perpendicular magnetic anisotropy for high density recording media
BaM/Pt multilayered films with fine grains and large perpendicular magnetic anisotropy for high density recording media
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用于高密度记录介质的细晶粒和大垂直磁各向异性的 BaM/Pt 多层薄膜
DOI：
10.1063/1.1359468
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
M. Naoe
中科院分区：
文献类型：
--
作者：
N. Matsushita;J. Feng;N. Funabashi;S. Nakagawa;M. Naoe
在9 nm厚的Pt底层上沉积磁铅石型Ba铁氧体（BaM）薄层，并且即使对于8 nm厚的BaM层也观察到优异的c轴取向，这对应于仅三个或四个BaM晶胞。即使当BaM层厚度tBaM从60 nm减小到17 nm时，晶粒尺寸也几乎在60-85 nm的相同范围内，并且tBaM应减小到10 nm以下以使晶粒尺寸小于50 nm。然而，由于更高的退磁场和对热涨落的敏感性，随着tBaM从60 nm减小到8 nm，垂直磁化率Hc ε和矩形度S ε分别从2.6 kOe和0.6 kOe减小到0.2 kOe。另一方面，对于相同的BaM层厚度，[BaM（5-24 nm）/Pt（9 nm）]3多层膜表现出比BaM/Pt双层膜更高的Hc ε和更大的S ε，并且[BaM（8 nm）/Pt（9 nm）]3多层膜的Hc ε和S ε分别为2.0 kOe和0.6。 结果表明，BaM/Pt多层膜的沉积是非常有效的。
A magnetoplumbite type of Ba ferrite (BaM) thin layer was deposited on a 9 nm thick Pt underlayer, and excellent c-axis orientation was observed even for an 8 nm thick BaM layer, which corresponds to only three or four BaM unit cells. The grain size was almost in the same range of 60–85 nm even when the BaM layer thickness tBaM decreased from 60 to 17 nm, and tBaM should be reduced below 10 nm to make a grain size smaller than 50 nm. However, the perpendicular coercivity Hc⊥ and squareness S⊥ decreased drastically from 2.6 to 0.5 kOe and from 0.6 to 0.2, respectively, with the decrease of tBaM from 60 to 8 nm because of higher demagnetizing field and susceptibility to thermal fluctuation. On the other hand, the [BaM(5–24 nm)/Pt(9 nm)]3 multilayer exhibited higher Hc⊥ and larger S⊥ than the BaM/Pt bilayer for the same BaM layer thickness and Hc⊥ and S⊥ of the [BaM(8 nm)/Pt(9 nm)]3 multilayer was 2.0 kOe and 0.6, respectively. It was clarified that the deposition of the BaM/Pt multilayer was very effective ...