Device implications of spin-transfer torques
Device implications of spin-transfer torques
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DOI：
10.1016/j.jmmm.2007.12.013
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发表时间：
2008-04-01
影响因子：
2.7
通讯作者：
Fullerton, Eric E.
中科院分区：
文献类型：
--
作者：
Katine, J. A.;Fullerton, Eric E.
本文从三个技术应用的角度来研究自旋转移力矩：硬盘驱动器、磁性随机存取存储器（MRAM）和电流可调高频振荡器。在硬盘驱动器中，自旋转移力矩是噪声的来源，我们讨论了自旋转移噪声将对未来的传感器设计的影响。对于MRAM，我们评估自旋转移驱动开关的可行性。最后，我们讨论了GHz通信应用的可能性，使纳米级自旋转移振荡器。(c)2007年爱思唯尔B. V.保留所有权利。
This article examines spin-transfer torques from the perspective of three technological applications: hard disk drives, magnetic random access memory (MRAM), and current-tunable high-frequency oscillators. In hard disk drives, spin-transfer torques are a source of noise, and we discuss the implications spin-transfer noise will have on future sensor designs. For MRAM, we evaluate the feasibility of spin-transfer-driven switching. Finally, we discuss the possibility of GHz communication applications enabled by nanoscale spin-transfer oscillators. (c) 2007 Elsevier B. V. All rights reserved.