Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric
Effect of channel thickness on electrical performance of amorphous IGZO thin-film transistor with atomic layer deposited alumina oxide dielectric
复制标题
沟道厚度对原子层沉积氧化铝电介质非晶IGZO薄膜晶体管电性能的影响
DOI：
10.1016/j.cap.2014.04.011
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发表时间：
2014-07-01
影响因子：
2.4
通讯作者：
Wang, G.
中科院分区：
文献类型：
--
作者：
Li, Y.;Pei, Y. L.;Wang, G.
我们研究了具有不同沟道厚度的非晶铟镓锌氧化物（α-IGZO）薄膜晶体管的电性能。据观察，当a-IGZO厚度增加时，阈值电压降低，如在其他研究中所报道的。本征场效应迁移率高达11.1 cm（2）/Vs，亚阈值斜率低至0.2 V/decade，与a-IGZO沟道的厚度无关，这表明即使在a-IGZO厚度为10 nm的情况下，a-IGZO与原子层沉积的Al 2 O 3介质之间也具有良好的界面。但是，随着a-IGZO沟道厚度的增加，源漏串联电阻增大，导致表观场效应迁移率降低。研究了负偏压应力（NBS）和负偏压光照应力（NBIS）下的阈值电压漂移（Δ Vth）。随着α-IGZO沟道厚度的减小，NBS下亚阈值区的驼峰效应和NBIS下阈值电压负移现象增强，这是由于沟道内垂直电场的增强所致。(C)2014爱思唯尔有限公司版权所有。
We have investigated the electrical performance of amorphous indium gallium zinc oxide (alpha-IGZO) thin-film transistors with various channel thicknesses. It is observed that when the a-IGZO thickness increases, the threshold voltage decreases as reported at other researches. The intrinsic field-effect mobility as high as 11.1 cm(2)/Vs and sub threshold slope as low as similar to 0.2 V/decade are independent on the thickness of a-IGZO channel, which indicate the excellent interface between a-IGZO and atomic layer deposited Al2O3 dielectric even for the case with alpha-IGZO thickness as thin as 10 nm. However, the source and drain series resistances increased with increasing of a-IGZO channel thickness, which results in the apparent field-effect mobility decreasing. The threshold voltage shift (Delta Vth) under negative bias stress (NBS) and negative bias illumination stress (NBIS) were investigated, also. The hump-effect in the sub threshold region under NBS and threshold voltage shift to negative position under NBIS were enhanced with decreasing of alpha-IGZO channel thickness, owing to the enhancement of vertical electrical field in channel. (C) 2014 Elsevier B.V. All rights reserved.