Density-gradient analysis of MOS tunneling
Density-gradient analysis of MOS tunneling
复制标题
MOS 隧道效应的密度梯度分析
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
D. Vook
中科院分区：
文献类型：
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作者：
M. Ancona;Zhiping Yu;R. Dutton;P. V. Voorde;M. Cao;D. Vook
本文应用量子输运的密度梯度描述，分析了氧化物MOS电容中的隧穿现象。电子和空穴隧穿都包括在一维（1-D）分析和两个新的改进密度梯度理论，一个有关的治疗肖克利-读取-霍尔复合和其他修改的隧道边界条件，以占半导体带隙。详细的比较与实验的电流-电压（I-V）数据与n/sup +/和p/sup +/多晶硅栅极和所有的数据的功能被发现是可以理解的密度梯度框架内的样品。这些结果除了提供了对这些实验的新的理解之外，还表明密度梯度方法对于量子区域中面向工程的器件分析具有重要价值。
The density-gradient description of quantum transport is applied to the analysis of tunneling phenomena in ultrathin (<25 /spl Aring/) oxide MOS capacitors. Both electron and hole tunneling are included in the one-dimensional (1-D) analysis and two new refinements to density-gradient theory are introduced, one relating to the treatment of Shockley-Read-Hall recombination and the other a modification of the tunneling boundary conditions to account for the semiconductor bandgap. Detailed comparisons are made with experimental current-voltage (I-V) data for samples with both n/sup +/ and p/sup +/ polysilicon gates and all of the features of the data are found to be understandable within the density-gradient framework. Besides providing new understanding of these experiments, these results show that the density-gradient approach can be of great value for engineering-oriented device analysis in quantum regimes.