Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
Deep subnanosecond spin torque switching in magnetic tunnel junctions with combined in-plane and perpendicular polarizers
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DOI：
10.1063/1.3565162
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发表时间：
2011-03
影响因子：
4
通讯作者：
G. Rowlands;T. Rahman;J. Katine;J. Langer;A. Lyle;Hui Zhao;J. G. Alzate;A. Kovalev;Y. Tserkovnyak;Z. Zeng;HongWen Jiang;K. Galatsis;Y. Huai;P. Amiri;Kang L. Wang;I. Krivorotov;Jianping Wang
中科院分区：
文献类型：
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作者：
G. Rowlands;T. Rahman;J. Katine;J. Langer;A. Lyle;Hui Zhao;J. G. Alzate;A. Kovalev;Y. Tserkovnyak;Z. Zeng;HongWen Jiang;K. Galatsis;Y. Huai;P. Amiri;Kang L. Wang;I. Krivorotov;Jianping Wang
我们证明，向具有面内自由层和面内偏振器的传统自旋扭矩存储元件添加垂直偏振器可以显着提高写入速度并降低元件的写入能量。我们演示了这种自旋扭矩存储元件的操作，写入能量为 0.4 pJ，写入时间为 0.12 ns。
We show that adding a perpendicular polarizer to a conventional spin torque memory element with an in-plane free layer and an in-plane polarizer can significantly increase the write speed and decrease the write energy of the element. We demonstrate the operation of such spin torque memory elements with write energies of 0.4 pJ and write times of 0.12 ns.