Sub-Micron Lithography Using InGaN Micro-LEDs: Mask-Free Fabrication of LED Arrays
Sub-Micron Lithography Using InGaN Micro-LEDs: Mask-Free Fabrication of LED Arrays
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DOI：
10.1109/lpt.2012.2225612
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发表时间：
2012-12
影响因子：
2.6
通讯作者：
B. Guilhabert;D. Massoubre;E. Richardson;J. McKendry;G. Valentine;R. Henderson;I. Watson;E. Gu
中科院分区：
文献类型：
--
作者：
B. Guilhabert;D. Massoubre;E. Richardson;J. McKendry;G. Valentine;R. Henderson;I. Watson;E. Gu
报道了利用微米级发光二极管（micro-LED）直接写入技术制作氮化镓（GaN）基发光二极管（LED）阵列。CMOS驱动的紫外GaN基微发光二极管阵列用于图案化光刻胶层，其特征尺寸小至500 nm。然后，使用基于单像素或多像素直写的这种光致抗蚀剂图案来制造纸板型方形LED阵列器件，并将其实现为完全无掩模工艺流程的一部分。这些示例阵列由450 nm发射的199 $\，\times\，$199 $\mu{\rm m}^{2}$像素和200 $\mu{\rm m}$间距组成，或者由520 nm发射的21 $\，\times\，$18 $\mu{\rm m}^{2}$像素和23 $\mu{\rm}$间距组成。在90 mA和6 mA直流注入电流下，每个像素的光输出功率密度分别为5和20 ${\rm W}/{\rm cm}^{2}$，填充因子分别为99%和71.5%。
The fabrication of gallium-nitride (GaN)-based light-emitting diode (LED) arrays by a direct writing technique, itself using micron-sized LEDs (micro-LEDs), is reported. CMOS-driven ultraviolet GaN-based micro-LED arrays are used to pattern photoresist layers with feature sizes as small as 500 nm. Checkerboard-type square LED array devices are then fabricated using such photoresist patterns based on either single pixel or multipixel direct writing, and implemented as part of a completely mask-less process flow. These exemplar arrays are composed of either 450-nm-emitting 199$\,\times\,$199 $\mu{\rm m}^{2}$ pixels on a 200- $\mu{\rm m}$ pitch or 520-nm-emitting 21$\,\times\,$ 18 $\mu{\rm m}^{2}$ pixels on a 23-$\mu{\rm m}$ pitch. Fill factors of 99% and 71.5% are achieved with optical output power densities per pixel of 5 and 20 ${\rm W}/{\rm cm}^{2}$ at 90- and 6-mA dc-injected currents, respectively.