A rapid molecular precursor solid-state route to crystalline Fe 2 GeS 4 nanoparticles
A rapid molecular precursor solid-state route to crystalline Fe 2 GeS 4 nanoparticles
复制标题
制备结晶 Fe 2 GeS 4 纳米颗粒的快速分子前体固态途径
DOI：
10.1016/j.matlet.2018.04.020
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发表时间：
2018
影响因子：
3
通讯作者：
Radu, Daniela R.
中科院分区：
文献类型：
--
作者：
Hwang, Po-Yu;Berg, Dominik M.;Liu, Mimi;Lai, Cheng-Yu;Radu, Daniela R.
硫化锗铁(Fe2GeS4)是一种很有潜力的薄膜太阳能光伏吸收材料。第三种元素--锗(Ge)的引入使Fe2GeS4在高温下具有稳定性，这通常是在第二代薄膜光伏中实现颗粒生长所必需的。本文介绍了一种由分子前驱体简单合成Fe2GeS4纳米粒子的方法，包括原料的机械混合，然后在富硫气氛中进行两小时的热处理。在高温下进一步处理得到的Fe2GeS4纳米粉末显示了Fe2GeS4的高热稳定性(高达500 °C)，与黄铁矿相比，黄铁矿在160 °C以上加热时开始形成磁黄铁矿，基于形成的第二晶相，我们提出了Fe2GeS4在高温下分解的机理。用Fe2GeS4制备的薄膜进行了进一步的退火热处理，发现Fe2GeS4薄膜耐高温。
Iron germanium sulfide (Fe2GeS4) recently emerged as a potential thin film solar photovoltaic absorber. The introduction of the third element—germanium (Ge)—viewed as a solution for overcoming multiple barriers of a photovoltaic pyrite, confers stability to Fe2GeS4at elevated temperatures, typically required for accomplishing grain growth in Gen 2 thin film PV. A facile synthesis of Fe2GeS4nanoparticles from molecular precursors, comprising mechanical mixing of starting materials followed by a two-hour annealing in a sulfur-rich atmosphere is presented herein. Further processing of the resulting Fe2GeS4nanopowders at elevated temperatures demonstrates high thermal stability of Fe2GeS4(up to 500 °C), in comparison with pyrite, which shows onset of pyrrhotite upon heating above 160 °C. Based on the secondary crystalline phases formed, we propose a mechanism of decomposition of Fe2GeS4at high temperatures. Films fabricated with Fe2GeS4were further annealed and revealed that Fe2GeS4withstands high temperatures in thin film.