Poly(3-hexylthiophene) Field-Effect Transistor with Controllable Threshold Voltage
Poly(3-hexylthiophene) Field-Effect Transistor with Controllable Threshold Voltage
复制标题
具有可控阈值电压的聚（3-己基噻吩）场效应晶体管
DOI：
10.1143/jjap.44.621
复制
发表时间：
2005
影响因子：
1.5
通讯作者：
K. Kudo
中科院分区：
文献类型：
--
作者：
H. Nishimura;M. Iizuka;M. Sakai;M. Nakamura;K. Kudo
采用电场铸造法制备了聚（3-己基噻吩）场效应晶体管（p3ht - fet）。在饱和CHCl3蒸汽的氮气气氛中，将P3HT浇铸在有源极和漏极的衬底上。在薄膜形成过程中，在电极之间施加电场。成膜后进行热处理和电场处理以控制器件参数。经热处理后，无电场作用的p3ht - fet在成膜过程中的阈值电压（Vth）基本不变。另一方面，电场作用形成的p3ht - fet的Vth可以通过热处理来控制。器件参数也可以通过后电场应用来控制。这些变化是氧掺杂或脱掺杂的结果。利用这种控制的p3ht - fet制造了两种具有不同反转点的逆变器。
Poly(3-hexylthiophene) field-effect transistors (P3HT-FETs) have been prepared by an electric-field casting method. P3HT was cast onto a substrate with source and drain electrodes in nitrogen atmosphere saturated with CHCl3 vapor. An electric-field was applied between the electrodes during film formation. Thermal treatment and electric-field application were performed after film formation to control the device parameters. The threshold voltage (Vth) of P3HT-FETs without electric-field application during film formation was almost invariable after the thermal treatment. On the other hand, the Vth of P3HT-FETs formed with electric-field application can be controlled using thermal treatment. The device parameters can also be controlled by a post-electric-field application. These variations are a result of the doping or dedoping of O2. Two types of inverter showing different inversion points were fabricated using such controlled P3HT-FETs.