Charge injection and trapping in silicon nanocrystals
Charge injection and trapping in silicon nanocrystals
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DOI：
10.1063/1.2119431
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发表时间：
2005-10-31
影响因子：
4
通讯作者：
Milne, WI
中科院分区：
文献类型：
--
作者：
Rafiq, MA;Tsuchiya, Y;Milne, WI
采用Al/Si异质结/p-Si/Al二极管研究了直径约为8 nm的硅纳米晶薄膜中导电机制的温度依赖性。使用300 nm的膜厚度。从300至200 K，空间电荷限制电流，在存在的指数分布的陷阱状态，占主导地位的传导机制。利用该模型，可求出陷阱密度N-t= 2.3 × 10 ~（17）cm ~（-3），特征陷阱温度T-t=1670 K。陷阱密度是在一个数量级的载流子数密度，这表明大多数纳米晶体陷阱单个或几个载流子在最多。(C)2005年美国物理学会。
The temperature dependence of the conduction mechanism in thin films of similar to 8 nm diameter silicon nanocrystals is investigated using Al/Si nanocrystal/p-Si/Al diodes. A film thickness of 300 nm is used. From 300 to 200 K, space charge limited current, in the presence of an exponential distribution of trapping states, dominates the conduction mechanism. Using this model, a trap density N-t=2.3x10(17) cm(-3) and a characteristic trap temperature T-t=1670 K can be extracted. The trap density is within an order of magnitude of the nanocrystal number density, suggesting that most nanocrystals trap single or a few carriers at most. (C) 2005 American Institute of Physics.