Phosphorus ion implantation in silicon nanocrystals embedded in SiO2
Phosphorus ion implantation in silicon nanocrystals embedded in SiO2
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DOI：
10.1063/1.3088871
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发表时间：
2009-03
影响因子：
3.2
通讯作者：
K. Murakami;Ryota Shirakawa;M. Tsujimura;N. Uchida;N. Fukata;S. Hishita
中科院分区：
文献类型：
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作者：
K. Murakami;Ryota Shirakawa;M. Tsujimura;N. Uchida;N. Fukata;S. Hishita
研究了磷离子（P+）注入SiO2中的Si纳米晶（SiNCs），以阐明在宽P浓度范围内P施主掺杂对SiNCs光致发光（PL）的三个量级的影响。某些类型的缺陷，如铅中心被发现仍然显着的SiNC和周围的SiO2之间的界面，即使通过高温（1000 °C）退火的所有样品。氢原子处理（HAT）方法可以有效地钝化剩余的界面缺陷，导致显着增加所产生的光致发光强度的电子空穴对的复合限制在SiNC中，除了显着减少与悬空键的界面缺陷检测到的电子自旋共振。从HAT前后的P剂量依赖关系的结果可以看出，对于经较低P+剂量注入损伤后再退火的SiNCs样品，其残余缺陷量较高，而通过HAT后，SiNCs样品的缺陷量降低。
We have investigated phosphorus ion (P+) implantation in Si nanocrystals (SiNCs) embedded in SiO2, in order to clarify the P donor doping effects for photoluminescence (PL) of SiNCs in wide P concentrations ranging in three orders. Some types of defects such as Pb centers were found to remain significantly at the interfaces between SiNCs and the surrounding SiO2 even by high-temperature (1000 °C) annealing of all the samples. Hydrogen atom treatment (HAT) method can efficiently passivate remaining interface defects, leading to significant increase in the intensity of PL arising from the recombination of electron-hole pairs confined in SiNCs, in addition to significant decrease in interface defects with dangling bonds detected by electron spin resonance. From both the results of the P dose dependence before and after HAT, it is found that the amount of remaining defects is higher for samples with SiNCs damaged by implantation with relatively lower P+ doses and then annealed, and that through HAT the observ...