Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
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DOI：
10.1143/apex.2.071404
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发表时间：
2009-05
影响因子：
2.3
通讯作者：
C. Lee;T. Tabata;T. Nishimura;K. Nagashio;K. Kita;A. Toriumi
中科院分区：
文献类型：
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作者：
C. Lee;T. Tabata;T. Nishimura;K. Nagashio;K. Kita;A. Toriumi
研究了Ge的高压氧化（HPO）对Ge/GeO 2叠层电性能的改善作用。采用HPO制备的金属/GeO 2/Ge电容器的电容-电压（C-V）特性表明，在没有任何沉积后退火的情况下，其电学性能得到改善，并且在带隙中部附近的界面态密度（Dit）降低到2×1011 eV-1cm-2。此外，热氧化的GeO 2的折射率增加HPO。从Ge/GeO_2系统的热力学角度讨论了HPO能有效地抑制Ge/GeO_2堆中GeO的脱附。
High-pressure oxidation (HPO) of germanium (Ge) for improving electrical properties of Ge/GeO2 stacks was investigated. The capacitance–voltage (C–V) characteristics of metal/GeO2/Ge capacitors fabricated with HPO revealed improved electrical properties without any post-deposition annealing, and the interface states density (Dit) was reduced to 2×1011 eV-1 cm-2 near the midgap. Moreover, the refractive index of thermally oxidized GeO2 was increased by HPO. It is also discussed from a thermodynamic viewpoint of the Ge/GeO2 system that the GeO desorption from Ge/GeO2 stacks could be efficiently suppressed by HPO.