Amorphous Solid without Low Energy Excitations
Amorphous Solid without Low Energy Excitations
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DOI：
10.1103/physrevlett.78.4418
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发表时间：
1997-06
影响因子：
8.6
通讯作者：
Xiao Liu;B. White;R. Pohl;E. Iwanizcko;Kim M. Jones;A. Mahan;B. N. Nelson;R. Crandall;S. Vepřek
中科院分区：
文献类型：
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作者：
Xiao Liu;B. White;R. Pohl;E. Iwanizcko;Kim M. Jones;A. Mahan;B. N. Nelson;R. Crandall;S. Vepřek
我们已经测量了无定形硅（A -SI）膜的低温内摩擦（Q {sup -1}）。 {Ital E} -beam蒸发或{sup 28} si {sup +}植入导致与所有无定形固体共有的Q {sup -1} {sup -1} {SUP -1} {sup -1} {sub 0}平原。用于氢化的无定形硅的1。 {百分比} h由热线化学蒸气沉积产生，但是，q {sup -1} {sub 0}的含量比{ital e} -beam {ital a} -si小200倍以上。这是对无明显低能量激发的无定形固体的首次观察。它提供了研究包含隧道缺陷密度受控的无定形固体，从而探索其性质的机会。 {版权} {ital 1997} {ital美国物理社会}
We have measured the low temperature internal friction (Q{sup -1}) of amorphous silicon (a-Si) films. {ital e}-beam evaporation or {sup 28}Si{sup +} implantation leads to the temperature-independent Q{sup -1}{sub 0} plateau common to all amorphous solids. For hydrogenated amorphous silicon with 1 at. {percent} H produced by hot wire chemical vapor deposition, however, Q{sup -1}{sub 0} is over 200 times smaller than for {ital e}-beam {ital a}-Si. This is the first observation of an amorphous solid without any significant low energy excitations. It offers the opportunity to study amorphous solids containing controlled densities of tunneling defects, and thus to explore their nature. {copyright} {ital 1997} {ital The American Physical Society}