Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition
Impact of the gas flow ratio on the physical properties of GaN grown by vertical flow metalorganic chemical vapour deposition
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DOI:
10.1016/j.jcrysgro.2010.04.039
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发表时间:
2010-07
影响因子:
1.8
通讯作者:
Tzu-Tao Yuan;P. Kuei;L. Hsieh;Tatyana Li;Wen-Jen Lin
中科院分区:
文献类型:
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作者:
Tzu-Tao Yuan;P. Kuei;L. Hsieh;Tatyana Li;Wen-Jen Lin