Avalanche multiplication in Al/sub x/Ga/sub 1-x/As (x=0 to 0.60)
Avalanche multiplication in Al/sub x/Ga/sub 1-x/As (x=0 to 0.60)
复制标题
Al/sub x/Ga/sub 1-x/As 中的雪崩倍增（x=0 至 0.60）
DOI：
--
复制
发表时间：
2000
期刊：
影响因子：
--
通讯作者：
G. Rees
中科院分区：
文献类型：
--
作者：
S. Plimmer;J. David;R. Grey;G. Rees
测量了Al/sub x/Ga/sub 1-x/As（x=0-0.60）同质结p/sup +/-i-n/sup +/二极管的电子和空穴倍增特性M/sub e/和M/sub h/，i区厚度w从1 /spl μ/m到0.025 /spl μ/m，并用蒙特卡罗模型（MC）进行了分析。因此，首次展示了组成对宏观倍增特性和微观行为的影响。增加合金分数导致倍增曲线向更高的电压移动，使得对于不同的x，在任何给定厚度下的倍增曲线实际上是平行的。M/sub e//M/sub h/比值也随着x的增加而减小，在w=1 /spl mu/mp/sup +/-i-n/sup +/中，随着x从0增加到0.60，从/spl sim/2变化到/spl sim/1。蒙特-卡罗模型还用于从测量结果中提取电离系数和死空间距离，所述测量结果覆盖每种组合物中的/spl sim/250 kV/cm-1200 kV/cm的电场范围。利用这些参数可以通过求解递推方程来计算非局部乘法过程。然而，当电场分布变得高度不均匀时，场依赖电离系数的适用性受到限制。
Electron and hole multiplication characteristics, M/sub e/ and M/sub h/, have been measured in Al/sub x/Ga/sub 1-x/As (x=0-0.60) homojunction p/sup +/-i-n/sup +/ diodes with i-region thicknesses, w, from 1 /spl mu/m to 0.025 /spl mu/m and analyzed using a Monte Carlo model (MC). The effect of the composition on both the macroscopic multiplication characteristics and microscopic behavior is therefore shown for the first time. Increasing the alloy fraction causes the multiplication curves to be shifted to higher voltages such that the multiplication curves at any given thickness are practically parallel for different x. The M/sub e//M/sub h/ ratio also decreases as x increases, varying from /spl sim/2 to /spl sim/1 as x increases from 0 to 0.60 in a w=1 /spl mu/m p/sup +/-i-n/sup +/. The Monte-Carlo model is also used to extract ionization coefficients and dead-space distances from the measured results which cover electric field ranges from /spl sim/250 kV/cm-1200 kV/cm in each composition. These parameters can be used to calculate the nonlocal multiplication process by solving recurrence equations. Limitations to the applicability of field-dependent ionization coefficients are shown to arise however when the electric-field profile becomes highly nonuniform.