Detailed of X-ray diffraction and photoluminescence studies of Ce doped ZnO nanocrystals
Detailed of X-ray diffraction and photoluminescence studies of Ce doped ZnO nanocrystals
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DOI：
10.1016/j.jallcom.2011.03.017
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发表时间：
2011-05-19
影响因子：
6.2
通讯作者：
Qureshi, M. S.
中科院分区：
文献类型：
--
作者：
George, Achamma;Sharma, Suchinder K.;Qureshi, M. S.
采用简单回流法合成了纯净和掺铈氧化锌纳米粉体。通过详细的x射线衍射分析，评价了掺杂离子浓度对应变和晶格参数的影响。通过透射电镜研究得到粒径为20 nm的颗粒。得到了Ce掺杂ZnO纳米晶体的球形形貌。在原始和掺杂ZnO样品中观察到多个发射带，其中401 nm发射带对应于激子-激子碰撞中自由激子重组的贡献。随着Ce的加入，表面缺陷增加，发射强度降低。(C) 2011 Elsevier B.V.版权所有
Pristine and Ce doped ZnO nanopowders were synthesized by simple refluxing technique. A detailed X-ray diffraction analysis was carried out to evaluate the contribution of dopant ion concentration on strain and lattice parameters. Aparticle size of 20 nm was obtained via TEM studies. Spherical morphology was obtained for Ce doped ZnO nanocrystals. Multiple emission bands were observed for pristine and doped ZnO samples where, 401 nm emission band corresponds to a contribution due to free excitons recombination through an exciton-exciton collisions. With the Ce addition, the surface defects increases and the emission intensity decreases. (C) 2011 Elsevier B.V. All rights reserved.