Electrical resistivity of metastable phases of BaSi2 synthesized under high pressure and high temperature
Electrical resistivity of metastable phases of BaSi2 synthesized under high pressure and high temperature
复制标题
高压高温合成BaSi2亚稳相的电阻率
DOI：
10.1016/0925-8388(95)01530-2
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发表时间：
1995
影响因子：
6.2
通讯作者：
T. Hirano
中科院分区：
文献类型：
--
作者：
M. Imai;T. Hirano
在高温高压条件下合成了BaSi 2的两种亚稳相：立方BaSi 2和三方BaSi 2。在常压和80 ~ 290 K温度范围内测量了这两种相和正交相BaSi_2的电阻率和主载流子。电性能取决于晶体结构。如先前所报道的，正交晶系BaSi 2是n型半导体。发现立方BaSi_2是n型半导体，而三方BaSi_2是空穴金属.在电性能的变化与结构的变化进行了讨论的原子间距离的变化。
Two metastable phases of BaSi2, cubic BaSi2and trigonal BaSi2, were synthesized under high-pressure and high-temperature conditions. The electrical resistivity and the dominant carrier of these two phases and the normal phase, orthorhombic BaSi2, were measured at atmospheric pressure and temperature from 80 to 290 K. The electrical properties depend on the crystal structure. The orthorhombic BaSi2is an n-type semiconductor as previously reported. It is found that the cubic BaSi2is an n-type semiconductor and that the trigonal BaSi2is a hole metal. The change in the electrical properties with the structural change is discussed in terms of the change in the interatomic distances.