Reversible switching of InP nanowire growth direction by catalyst engineering.
Reversible switching of InP nanowire growth direction by catalyst engineering.
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DOI：
10.1021/nl401767b
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发表时间：
2013-08
期刊：
影响因子：
10.8
通讯作者：
J. Wang;S. Plissard;M. Verheijen;L. Feiner;A. Cavalli;E. Bakkers
中科院分区：
文献类型：
--
作者：
J. Wang;S. Plissard;M. Verheijen;L. Feiner;A. Cavalli;E. Bakkers
We demonstrate high yield vapor-liquid-solid (VLS) growth of [100]-oriented InP nanowire arrays. The highest yield (97%) is obtained when the catalyst droplet is filled with indium prior to nanowire nucleation to the equilibrium composition during nanowire growth. Using these [100] wires as a template we can reversibly switch between a [100] and a [111] growth direction by varying the indium content of the droplet. Modeling VLS growth by a kinetic nucleation model indicates that the growth direction is governed by the liquid-vapor interface energy that is strongly affected by the indium concentration in the catalyst droplet.
