Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon
Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon
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DOI：
10.1364/oe.21.000867
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发表时间：
2013-01-14
期刊：
影响因子：
3.8
通讯作者：
Miller, David A. B.
中科院分区：
文献类型：
--
作者：
Edwards, Elizabeth H.;Lever, Leon;Miller, David A. B.
我们证明了电吸收对比度大于5 dB的整个电信S-和C-波段，只有1V的驱动器，使用一种新的Ge/SiGe量子阱外延设计方法;此外，这是证明了最薄的Ge/SiGe外延到目前为止，使用虚拟基板只有320 nm厚。我们使用本征模展开方法来模拟SOI波导和垂直和对接耦合的Ge/SiGe器件之间的光耦合，并表明，这种厚度的减少预计会导致波导集成器件的插入损耗的显着改善。(C)2013年美国光学学会
We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S-and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices. (C) 2013 Optical Society of America