Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer
Tuning the threshold voltage of organic field-effect transistors by an electret encapsulating layer
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DOI：
10.1063/1.2426926
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发表时间：
2007-01-01
影响因子：
4
通讯作者：
Hilleringmann, U.
中科院分区：
文献类型：
--
作者：
Scharnberg, M.;Zaporojtchenko, V.;Hilleringmann, U.
在这里，作者提出了一种调整有机场效应晶体管 (OFET) 阈值电压的技术，该技术采用类似于双栅极结构的设计，并以绝缘特氟龙驻极体层作为第二栅极。通过沉积 1.7 μm 厚的驻极体层，并五苯底栅 OFET 的阈值电压从 +13.1 V 转变为 -2.3 V，证明了该方法的主要可行性。这种阈值电压的受控调谐补偿了有机电子器件的主要缺点之一，甚至允许从耗尽型晶体管行为切换到增强型晶体管行为。
Here, the authors present a technique to adjust the threshold voltage of an organic field-effect transistor (OFET) using a design similar to a dual-gate structure with an insulating Teflon-based electret layer as a second gate. The threshold voltage of a pentacene bottom gate OFET was shifted from +13.1 to -2.3 V by depositon of a 1.7 mu m thick electret layer, proving the principal feasibility of this approach. This controlled tuning of the threshold voltage compensates one of the main drawbacks of organic electronics and even allows switching from a depletion to an enhancement-type transistor behavior.