Low-threshold intersubband laser based on interface-scattering-rate engineering
Low-threshold intersubband laser based on interface-scattering-rate engineering
复制标题
基于界面散射率工程的低阈值子带间激光器
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
W. Masselink
中科院分区：
文献类型：
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作者：
M. Semtsiv;Y. Flores;M. Chashnikova;G. Monastyrskyi;W. Masselink
利用半导体异质结中由于界面粗糙度引起的不同电子态之间的散射率与势垒高度的关系来增强子带间激光器中的布居反转。在应变补偿的InGaAs-InAlAs异质结中使用不同高度的势垒来增加或减少特定限制态的界面粗糙度散射分量。具体地，在上激光状态具有其最高概率的情况下使用低势垒，从而最大化上激光状态的寿命；在下激光状态和随后的几个受限状态具有其最高概率的情况下使用较高势垒，从而最小化下激光状态的寿命。通过这种方式组合不同的势垒高度，增加了上激光态的寿命，同时缩短了下激光态的寿命，从而显著地增强了布居反转。这一设计具有很强的实用性。
The dependence of the scattering rate between different electronic states in semiconductor heterostructures due to interface roughness on the barrier height is exploited to enhance the population inversion in intersubband lasers. Barriers with differing heights are used within a strain-compensated InGaAs-InAlAs heterostructure to either increase or decrease the interface-roughness scattering component for specific confined states. In particular, low barriers are used where the upper laser state has its highest probability, thus maximizing the lifetime of the upper laser state; the higher barriers are used where the lower laser state and the few subsequent confined states have their highest probabilities, thus minimizing the lifetime of the lower laser state. By combining differing barrier heights in this way, the lifetime of the upper laser state is increased, while simultaneously the lifetime of the lower laser state is decreased; thus, the population inversion is significantly enhanced. This design appr...