Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization
Improved barrier properties of ultrathin Ru film with TaN interlayer for copper metallization
复制标题
DOI：
10.1063/1.2195112
复制
发表时间：
2006-04
影响因子：
4
通讯作者：
X. Qu;J. Tan;Mi Zhou;Tao Chen;Qi Xie;G. Ru;Bingzong Li
中科院分区：
文献类型：
--
作者：
X. Qu;J. Tan;Mi Zhou;Tao Chen;Qi Xie;G. Ru;Bingzong Li
研究了超薄Ru(∼5 nm)/TaN(∼5 nm)双层膜作为铜扩散阻挡层的性能。采用离子束溅射技术制备了Cu、Ru和TaN薄膜。实验结果表明，Cu/Ru/Tan/Si结构的热稳定性比Cu/Ru/Si结构的要好得多，这应归因于非晶态TaN过渡层的插入。文中还讨论了Cu/Ru/Tan/Si结构在退火过程中的组织演变。结果表明，Ru/TaN双层膜在未来的无籽铜互连技术中是一种很有前途的扩散势垒。
The properties of ultrathin ruthenium (∼5nm)∕TaN(∼5nm) bilayer as the copper diffusion barrier are studied. Cu, Ru, and TaN thin films are deposited by using the ion beam sputtering technique. The experimental results show that the thermal stability of the Cu∕Ru∕TaN∕Si structure is much more improved than that of the Cu∕Ru∕Si structure, which should be attributed to the insertion of the amorphous TaN interlayer. The microstructure evolution of the Cu∕Ru∕TaN∕Si structure during annealing is also discussed. The results show that the Ru∕TaN bilayer can be a very promising diffusion barrier in the future seedless Cu interconnect technology.