Demonstration of multilevel cell spin transfer switching in MgO magnetic tunnel junctions
Demonstration of multilevel cell spin transfer switching in MgO magnetic tunnel junctions
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DOI：
10.1063/1.3049617
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发表时间：
2008-12-15
影响因子：
4
通讯作者：
Tang, Michael X.
中科院分区：
文献类型：
--
作者：
Lou, Xiaohua;Gao, Zheng;Tang, Michael X.
多能级单元是提高自旋转移矩存储器密度的一个重要概念。我们展示了两位多级单元自旋转移开关使用氧化镁基磁性隧道结。两种类型的细胞结构设计进行了讨论。在电流驱动的自旋转移切换回路中描绘了多个电阻水平，其显示出类似于2x 10（6）A/cm（2）的切换电流密度。软位的高和低状态之间的可逆转换是使用小循环自旋转移切换来实现的。讨论了外磁场对自旋转移开关的影响。
Multilevel cell is an important concept to improve the density of spin transfer torque memory. We demonstrated two-bit multilevel cell spin transfer switching using MgO-based magnetic tunnel junctions. Two types of cell structural design are discussed. Multiple resistance levels are depicted in a current-driven spin transfer switching loop, which shows a switching current density of similar to 2x10(6) A/cm(2). Reversible transitions between high and low states of the soft bit are achieved using minor-loop spin transfer switching. The influence of external magnetic field to spin transfer switching is also discussed.