Digital chemical vapor deposition and etching technologies for semiconductor processing
Digital chemical vapor deposition and etching technologies for semiconductor processing
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用于半导体加工的数字化学气相沉积和蚀刻技术
DOI：
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发表时间：
1990
期刊：
影响因子：
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通讯作者：
M. Hirose
中科院分区：
文献类型：
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作者：
Y. Horiike;Takashi Tanaka;M. Nakano;S. Iseda;H. Sakaue;A. Nagata;H. Shindo;S. Miyazaki;M. Hirose
介绍了数字化化学气相沉积（CVD）和刻蚀技术的新概念。ArF准分子激光照射到冷却到−70 °C的衬底上的凝聚Si 2 H6层，导致空间选择性多晶硅薄膜生长。通过气体压力和衬底温度控制的吸附物厚度允许Si的逐粒原子层生长。SiO2的数字CVD也通过硅烷自由基沉积和随后的氧化的重复循环来实现。该反应通过交替引入脉冲微波放电SiH 4和O2束来促进。以超音速喷射到高真空反应器中的沉积物质将SiO2填充到深沟槽中。此外，为了实现无损伤蚀刻的目标，已经研究了Si单层的数字蚀刻。通过重复由氟原子在冷却至-100 °C的Si表面上的吸附和随后的Ar+离子照射组成的反应循环获得的初步结果实现了Si（100）的原子层蚀刻。
A novel concept on digital chemical vapor deposition (CVD) and etching technologies is described. ArF excimer laser irradiation to a condensed Si2H6 layer on a substrate cooled to −70 °C has resulted in spatially selective poly‐Si film growth. The adsorbate thickness control by gas pressure and substrate temperature allows shot by shot atomic layer growth of Si. Digital CVD of SiO2 is also achieved by a repetitive cycles of silane radical deposition and subsequent oxidation. This reaction is promoted by an alternate introduction of pulsed microwave‐discharged SiH4 and O2 beams. The deposition species ejected with supersonic velocity into the high vacuum reactor fills SiO2 into a deep trench. Also, digital etching of Si monolayers has been studied for the goal of damage‐free etching. A preliminary result obtained by repeating the reaction cycle consisting of adsorption of fluorine atoms on a Si surface cooled to −100 °C and subsequent Ar+ ion irradiation has realized atomic layer etching of Si(100).