Analysis of Defects and Traps in N-I-P Layered-Structure of Perovskite Solar Cells by Charge-Based Deep Level Transient, Spectroscopy (Q-DLTS)
Analysis of Defects and Traps in N-I-P Layered-Structure of Perovskite Solar Cells by Charge-Based Deep Level Transient, Spectroscopy (Q-DLTS)
复制标题
DOI：
10.1021/acs.jpcc.8b01949
复制
发表时间：
2018-08-09
影响因子：
3.7
通讯作者：
Thien-Phap Nguyen
中科院分区：
文献类型：
--
作者：
Hsieh, Hsiao-Chi;Hsiow, Chuen-Yo;Thien-Phap Nguyen
制备了一系列具有三种不同HTM层的层状结构钙钛矿太阳能电池，所述HTM层由P3 HT、PBTTTV-h和螺-OMeV组成，以研究器件中的分子间和界面缺陷密度。基于电荷的深能级瞬态谱是分析器件内部缺陷的有力工具。我们观察到的填充因子与缺陷密度的改善，从而减少界面电荷复合。器件的迟滞行为取决于材料和界面中电荷俘获和复合过程的陷阱浓度。详细情况将在我们的报告中讨论。
A series of layered-structure perovskite solar cells with three different HTM layers consisting of P3HT, PBTTTV-h, and spiro-OMeTAD were fabricated to investigate intermolecular and interfacial defect density in the devices. Charge-based deep level transient spectroscopy is a powerful tool for analyzing defects within devices. We observe the improvement of fill factor associated with the defect density, resulting in the reduction of interfacial charge recombination. The hysteresis behavior of the devices depends on the trap concentration in the materials and interfaces by charge trapping as well as the recombination processes. The details are discussed in our report.