Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors
Dependence of ohmic contact properties on AlGaN layer thickness for AlGaN/GaN high-electron-mobility transistors
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AlGaN/GaN 高电子迁移率晶体管的欧姆接触特性对 AlGaN 层厚度的依赖性
DOI：
10.7567/jjap.55.040306
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发表时间：
2016
影响因子：
1.5
通讯作者：
H. Iwai
中科院分区：
文献类型：
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作者：
Y. Takei;K. Tsutsui;W. Saito;K. Kakushima;H. Wakabayashi;H. Iwai
研究了AlGaN/GaN高电子迁移率晶体管（HEMT）结构中欧姆接触电阻与AlGaN层厚度的关系。在不同厚度的AlGaN层上形成Mo/Al/Ti触点。观察到的电阻特性是在一个模型的基础上讨论的，在这个模型中，整个接触电阻由一系列的三个电阻分量组成。在低温（800-850℃）和高温（900-950℃）退火后，观察到不同的AlGaN层厚度的依赖性。结果表明，降低金属/AlGaN界面和AlGaN层的电阻对于获得低电阻欧姆接触非常重要。
The dependence of ohmic contact resistance on the AlGaN layer thickness was evaluated for AlGaN/GaN high-electron-mobility transistor (HEMT) structures. Mo/Al/Ti contacts were formed on AlGaN layers with various thicknesses. The observed resistance characteristics are discussed on the basis of a model in which the overall contact resistance is composed of a series of three resistance components. Different dependences on the AlGaN layer thickness was observed after annealing at low temperatures (800–850 °C) and at high temperatures (900–950 °C). It was determined that lowering the resistance at the metal/AlGaN interface and that of the AlGaN layer is important for obtaining low-resistance ohmic contacts.
S. Shikii 等：“使用飞秒激光脉冲激发的太赫兹辐射观察 Yba_2-Cu_3O_<7-8> 薄膜中的超电流分布”Appl。
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