Activation energies for the formation and evaporation of vacancy clusters in silicon.
Activation energies for the formation and evaporation of vacancy clusters in silicon.
复制标题
硅中空位簇形成和蒸发的活化能。
DOI：
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发表时间：
2008
影响因子：
8.6
通讯作者：
P. Coleman
中科院分区：
文献类型：
--
作者：
D. Abdulmalik;P. Coleman
本文用可变能量正电子湮没谱研究了直拉硅和外延硅中空位型缺陷的热演化。在300-500 ℃下加热导致双空位的快速迁移和所产生的缺陷的聚集，在epi-和Cz-Si中具有2.1（2）和2.7（7）eV的活化能。团簇发生更迅速地在Cz-Si中，归因于杂质的播种效应。在500-640摄氏度下加热使团簇退火，其中epi-和Cz-Si中的活化能为3.9（3）和3.6（3）eV，与空位团簇结合能相关。
The thermal evolution of vacancy-type defects in Czochralski (Cz-) and epitaxially grown (epi-) silicon has been investigated using variable-energy positron annihilation spectroscopy. Heating at 300-500 degrees C caused rapid migration of divacancies and clustering of the resulting defects with activation energies of 2.1(2) and 2.7(7) eV in epi- and Cz-Si. Clustering occurred more rapidly in Cz-Si, attributed to the seeding effect of impurities. Heating at 500-640 degrees C annealed the clusters with activation energies of 3.9(3) and 3.6(3) eV in epi- and Cz-Si, linked to the vacancy-cluster binding energy.