SYSTEMATIC CHANGE IN SURFACE-STRUCTURES ON SI(111) CLEAN SURFACES WITH TEMPERATURE
SYSTEMATIC CHANGE IN SURFACE-STRUCTURES ON SI(111) CLEAN SURFACES WITH TEMPERATURE
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DOI：
10.1080/09500839208207520
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发表时间：
1992-02-01
影响因子：
1.2
通讯作者：
DOI, T
中科院分区：
文献类型：
--
作者：
ISHIZAKA, A;DOI, T
研究了Si（111）表面结构的温度依赖性。测量了Si（111）清洁表面反射电子衍射强度随温度的变化。衍射强度在830、1110和1410 K处发生变化，分别对应于低温7 × 7相变、高温7 × 7相变、7 × 7 1 × 1相变和表面有序-无序相变。这些温度分别相当于0.49（几乎等于3/6）T（m）、0.66（几乎等于4/6）T（m）和0.84（几乎等于5/6）T（m），其中T（m）是体硅在绝对温度标度上的熔化温度。这些温度的意义进行了讨论，在晶体表面的网站，例如扭结，壁架和梯田。
The temperature dependence of Si(111) surface structures has been studied. Reflection electron diffraction intensities have been measured for Si(111) clean surfaces as a function of temperature. Diffraction intensities change at 830, 1110 and 1410 K, corresponding to a low-temperature 7 x 7 phase a high-temperature 7 x 7, 7 x 7 1 x 1 phase transition, and a surface order-disorder transition respectively. These temperatures are equivalent to 0.49(almost-equal-to 3/6)T(m), 0.66(almost-equal-to 4/6)T(m), and 0.84(almost-equal-to 5/6)T(m) respectively, where T(m) is the melting temperature of bulk Si on the absolute temperature scale. The significance of these temperatures is discussed in relation to the crystal surface sites, for example kinks, ledges and terraces.