Current-induced switching of exchange bias in nano-scaled magnetic tunnel junctions with a synthetic antiferromagnetic pinned layer
Current-induced switching of exchange bias in nano-scaled magnetic tunnel junctions with a synthetic antiferromagnetic pinned layer
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DOI：
10.1063/1.3673811
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发表时间：
2012-02
影响因子：
3.2
通讯作者：
C. Chao;C. Kuo;L. Horng;M. Tsunoda;M. Takahashi;J. Wu
中科院分区：
文献类型：
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作者：
C. Chao;C. Kuo;L. Horng;M. Tsunoda;M. Takahashi;J. Wu
本文研究了纳米级磁隧道结（MTJ）电池在无外加磁场条件下的电流诱导交换偏置开关。采用电子束刻蚀和离子束刻蚀相结合的方法，将MTJ叠层薄膜刻成尺寸为120nm × 270nm的椭圆。利用持续时间为100 ns的自旋极化电流脉冲来切换合成反铁磁（SAF）钉住层的交换偏置方向。值得注意的是，在施加电流脉冲之前，MTJ细胞被初始化为高电阻状态。对于正负电流脉冲的应用，电阻可以分别在2.95和- 2.80 mA时从高（反并联）状态切换到低（并联）状态。在电流感应开关后，磁阻曲线与电流感应开关前的磁阻曲线相反。总的来说，这种行为与电流的极性无关。
This report investigates the current-induced switching of exchange bias without an external magnetic field in nano-scaled magnetic tunnel junction (MTJ) cells. An MTJ stack film was patterned into an ellipse with dimensions of 120 nm × 270 nm by using standard electron beam lithography in combination with ion beam etching. A spin-polarized current pulse with a duration of 100 ns was used to switch the exchange bias direction of the synthetic antiferromagnetic (SAF) pinned layer. It is worth noting that the MTJ cell was initialized in a high resistance state before applying the current pulse. For the application of both positive and negative current pulses, the resistance can be switched from the high (antiparallel) state to the low (parallel) one at 2.95 and −2.80 mA, respectively. After the current-induced switching, it was found that the magnetoresistance curve is reversed relative to the one before the current-induced switching. Predominantly, this behavior is independent of the polarity of the current...