Effects of Gd substitution on structure and ferroelectric properties of BiFeO3 thin films prepared using metal organic decomposition
Effects of Gd substitution on structure and ferroelectric properties of BiFeO3 thin films prepared using metal organic decomposition
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Gd取代对金属有机分解制备BiFeO3薄膜结构和铁电性能的影响
DOI：
10.1063/1.2822826
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发表时间：
2007-12-03
影响因子：
4
通讯作者：
Yang, C. H.
中科院分区：
文献类型：
--
作者：
Hu, G. D.;Cheng, X.;Yang, C. H.
采用金属有机分解法制备了BiFeO_3和Bi1-xGdxFeO_3(BGFO)(x=0.03，0.05，0.07，0.10和0.15)薄膜。X-射线衍射结果表明，随着Gd含量的增加，BGFO薄膜会发生从菱方结构到伪四方结构的渐变相变。由于较小的颗粒尺寸和较光滑的表面导致较低的漏电流，所有BGFO薄膜在室温下都可以观察到饱和的P-E磁滞回线，在3-50 kHz范围内表现出较弱的频率依赖性。BGFO(x=0.03)薄膜的剩余极化约为79uC/cm(2)。此外，在10(9)次切换循环后，不能观察到明显的疲劳。(C)2007年美国物理研究所。
BiFeO3 and Bi1-xGdxFeO3 (BGFO) (x=0.03, 0.05, 0.07, 0.10, and 0.15) thin films were deposited on Pt/Ti/SiO2/Si substrates using a metal organic decomposition process. X-ray diffraction results show that a gradual phase transition from rhombohedral to pseudotetragonal structure may occur in BGFO films with the increase of Gd content. Due to the lower leakage currents resulting from the smaller grain sizes and smoother surfaces, well saturated P-E hysteresis loops, which show weak dependence of frequency in the range of 3-50 kHz, can be observed in all BGFO films at room temperature. The remanent polarization for BGFO(x=0.03) film is about 79 mu C/cm(2). In addition, no evident fatigue can be observed after 10(9) switching cycles. (c) 2007 American Institute of Physics.