Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection
Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection
复制标题
用于 pH 检测的分子门控 AlGaN/GaN 高电子迁移率晶体管
DOI：
10.1039/c8an00032h
复制
发表时间：
2018-06-21
期刊：
影响因子：
4.2
通讯作者：
Li, Jiadong
中科院分区：
文献类型：
--
作者：
Ding, Xiangzhen;Yang, Shuai;Li, Jiadong
A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection. The sensing surface of the sensor was modified with 3-aminopropyltriethoxysilane to provide amphoteric amine groups, which would play the role of receptors for pH detection. On modification with 3-aminopropyltriethoxysilane, the transistor exhibits good chemical stability in hydrochloric acid solution and is sensitive for pH detection. Thus, our molecular gated-AlGaN/GaN high electron mobility transistor acheived good electrical performances such as chemical stability (remained stable in hydrochloric acid solution), good sensitivity (37.17 mu A/pH) and low hysteresis. The results indicate a promising future for high-quality sensors for pH detection.
