Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma
Effect of preoxidation on deposition of thin gate-quality silicon oxide film at low temperature by using a sputter-type electron cyclotron resonance plasma
复制标题
预氧化对溅射型电子回旋共振等离子体低温沉积栅级氧化硅薄膜的影响
DOI：
10.1063/1.366431
复制
发表时间：
1997
影响因子：
3.2
通讯作者：
T. Tsurushima
中科院分区：
文献类型：
--
作者：
D. Gao;Y. Kashiwazaki;K. Muraoka;H. Nakashima;K. Furukawa;Yichun Liu;K. Shibata;T. Tsurushima
我们研究了一种结合预氧化和随后的溅射沉积的方法，用于制备厚度小于10 nm的氧化硅薄膜在低温下使用的磁控管型电子回旋共振等离子体系统。作为获得高质量复合氧化物结构的关键工艺，在130 °C的衬底温度下，在不同气体流量下研究了等离子体预氧化。确定了预氧化的最佳条件。通过这种方法与预氧化形成的氧化硅的结构特性进行了表征，并与那些直接溅射没有预氧化步骤的氧化硅进行了比较。结果表明，预氧化法是一种建立突变Si/SiO_2界面区和获得网络无序度较低的薄膜的有效方法。然后在该程序之后在Ar环境中在450 °C下进行热退火。制备的氧化硅薄膜具有小于1.0× 1.5的固定电荷密度。
We have studied a method of combining preoxidation and subsequent sputter deposition for fabricating Si oxide films with a thickness of less than 10 nm at low temperature by using a sputter-type electron cyclotron resonance plasma system. As a key process to achieving high quality composite oxide structures, plasma preoxidation was investigated under different gas flow rates at a substrate temperature of 130 °C. The optimum conditions for the preoxidation were clarified. The structural properties of Si oxide formed by this method with the preoxidation were characterized and compared with those of Si oxide which was directly sputtered without a preoxidation step. It was found that the method with the preoxidation provided a useful way of establishing an abrupt Si/SiO2 interface region and achieving films which have a lower network disorder degree. This procedure was then followed by a thermal annealing in Ar ambient at 450 °C. A thin Si oxide film was produced with a fixed charge density of less than 1.0×1...