Synthesis of polymers for hole and electron transport materials in organic electroluminescent devices
Synthesis of polymers for hole and electron transport materials in organic electroluminescent devices
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有机电致发光器件中空穴和电子传输材料聚合物的合成
DOI：
10.1109/16.605473
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发表时间：
1997
影响因子：
3.1
通讯作者：
H. Sato
中科院分区：
文献类型：
--
作者：
J. Son;Y. Sakaki;K. Ogino;H. Sato
制备了侧链含有四苯基联苯胺（TPD）或四苯基苯二氨基苯（PDA）和恶二唑（PBD）单元的苯乙烯型聚合物，分别作为电致发光（EL）器件的空穴和电子传输材料。所采用的器件结构是[氧化铟锡（ITO）/空穴传输层（HTL）/Al]（I型）或[ITO/空穴传输层（HTL）/电子传输层（ETL）/Al]（II型）。I型器件提供高于100 mA/cm/sup 2/的电流密度，但没有观察到发光。II型器件在约170 mA/cm/sup 2/的电流密度下发射约10 cd/m/sup 2/的发光。对于使用TPD和PDA的器件，这些器件的发射最大值分别为460和530 nm。
Styrene-type polymers having tetraphenylbenzidine (TPD) or tetraphenylphenyldiaminobenzene unit (PDA) and a oxadiazole unit (PBD) on the side chain were prepared as hole and electron transport materials, respectively, of an electroluminescent (EL) device. The device structures employed were [indium-tin-oxide (ITO)/hole transport layer (HTL)/Al] (type I), or [ITO/hole transport layer (HTL)/electron transport layer (ETL)/Al] (type II). Type I devices provided current density higher than 100 mA/cm/sup 2/ but no luminescence was observed. Type II devices emitted luminescence of about 10 cd/m/sup 2/ at the current density of about 170 mA/cm/sup 2/. The emission maximums of these devices were 460 and 530 nm for the device using TPD and PDA, respectively.