Reduced leakage current, enhanced ferroelectric and dielectric properties in (Ce,Fe)- codoped Na0.5Bi0.5TiO3 film
Reduced leakage current, enhanced ferroelectric and dielectric properties in (Ce,Fe)- codoped Na0.5Bi0.5TiO3 film
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DOI：
10.1063/1.3676663
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发表时间：
2012-01
影响因子：
4
通讯作者：
Changhong Yang;G. Hu;Weibing Wu;H. T. Wu;Fuqian Yang;Zeyu Lu;Lianzhou Wang
中科院分区：
文献类型：
--
作者：
Changhong Yang;G. Hu;Weibing Wu;H. T. Wu;Fuqian Yang;Zeyu Lu;Lianzhou Wang
采用金属有机分解的方法在LaNiO3(100)/Si衬底上制备了Na0.5Bi0.5TiO3 （NBT）、Ce掺杂NBT （NBTCe）、Fe掺杂NBT （NBTFe）和（Ce,Fe）共掺杂NBT （NBTCeFe）薄膜。与NBT膜相比，500kv /cm时NBTCeFe的泄漏电流密度降低了约2个数量级，主要是由于氧空位密度的降低和缺陷配合物的形成。由于减少了漏电流、增加了a位空位和晶格畸变，NBTCeFe的铁电性得到了增强，剩余极化率达到24 μC/cm2。NBTCeFe在10 kHz时的介电常数为585，介电损耗为0.05。
Na0.5Bi0.5TiO3 (NBT), Ce-doped NBT (NBTCe), Fe-doped NBT (NBTFe), and (Ce,Fe)-codoped NBT (NBTCeFe) thin films were fabricated on LaNiO3(100)/Si substrates by metal organic decomposition. The leakage current density of NBTCeFe at 500 kV/cm is reduced by approximately two orders of magnitude by reducing the density of oxygen vacancies and forming the defect complexes, compared with NBT film. Enhanced ferroelectricity is achieved in NBTCeFe with a large remanent polarization of 24 μC/cm2 due to the reduced leakage current, extra A-site vacancies, and lattice distortion. The NBTCeFe also exhibits a dielectric constant of 585 and dielectric loss of 0.05 at 10 kHz.