Stochastic printing behavior of ML-defects on EUV mask
Stochastic printing behavior of ML-defects on EUV mask
复制标题
EUV 掩模上 ML 缺陷的随机印刷行为
DOI：
10.1117/12.2538153
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发表时间：
2019
期刊：
影响因子：
--
通讯作者：
R. Capelli
中科院分区：
文献类型：
--
作者：
R. Jonckheere;L. Melvin;R. Capelli
对于用于IC制造的EUV图案化的使用的剩余关注之一是其随机行为。本文具体研究了掩模缺陷对随机故障率的贡献，重点是与掩模的多层反射镜相关的缺陷，即所谓的ML缺陷。通过模拟，得到了给定掩模缺陷引起硅片随机失效的概率与其引起的平均局部CD偏差之间的普遍关系。即使是边际ML缺陷，导致小于10%的CD偏差，被证明作为触发点，局部增加故障概率。这一发现得到了基于扫描仪光子随机仿真模式下AIMS EUV空间图像测量的实验数据的支持。此外，掩模上的其他局部缺陷类型也表现出相同的行为。非局部掩模缺陷，例如线边缘粗糙度和污染效应，可以影响掩模对晶片上印刷图像的随机故障率的贡献。
One of the residual concerns for use of EUV patterning for IC manufacturing is its stochastic behavior. The present paper specifically studies the contribution of mask defects to the stochastic failure rate, with a focus on defects related to the multilayer mirror of the mask, so-called ML-defects. By simulation, a universal relation is obtained between the probability that a given mask defect triggers a stochastic failure on wafer and the average local CD deviation that it causes. Even marginal ML-defects, which cause less than 10% CD deviation, are shown to act as trigger points for locally increased failure probability. This finding is supported by experimental data based on AIMS EUV aerial image measurements in scanner photon stochastics emulation mode. In addition, other local defect types on mask are shown to behave in the same way. Non-local mask deficiencies, such as line-edge roughness and contamination effects, can influence the contribution of the mask to the stochastic failure rate of the printed image on wafer.